Optimization of the stresses in tungsten sputtered films, study of their stability
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 6 (1-4), 253-258
- https://doi.org/10.1016/0167-9317(87)90046-3
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Tungsten: An alternative to gold for x-ray masksJournal of Vacuum Science & Technology B, 1987
- Ion-implant compensation of tensile stress in Tungsten absorber for low distortion X-ray masksMicroelectronic Engineering, 1986
- Stability of SiC-masks for high resolution synchrotron X-ray lithographyMicroelectronic Engineering, 1986
- Properties of Tungsten Film Deposited on GaAs by RF Magnetron SputteringJournal of the Electrochemical Society, 1985
- Plasma-enhanced chemical vapor deposition of β-tungsten, a metastable phaseApplied Physics Letters, 1984
- Resistivity behavior and phase transformations in β-W thin filmsThin Solid Films, 1974
- The preparation and characterization of beta-tungsten, a metastable tungsten phaseMetallurgical Transactions, 1974
- Microstructure, growth, resistivity, and stresses in thin tungsten films deposited by rf sputteringJournal of Applied Physics, 1973
- Superconductivity in β-Tungsten FilmsJournal of Applied Physics, 1968
- Chemical Vapor Deposition of Tungsten at Low PressureJournal of the Electrochemical Society, 1962