On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
- 1 July 2003
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 19 (1-2), 33-38
- https://doi.org/10.1016/s1386-9477(03)00290-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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