MIS structures based on spin-on SiO2 on GaAs

Abstract

MIS capacitors have been produced on GaAs substrates using spin‐on SiO₂ as the primary gate insulator. Following appropriate densification and annealing procedures, these samples show electrical properties superior, or comparable, to the reported data on other GaAs MIS structures. The formation of the surface inversion layer in the reverse‐bias region, the relatively low leakage current, and the small hysteresis in these samples strongly suggest that it may be possible to fabricate useful enhancement mode MOSFET’s on GaAs using the present technique. A detailed description of the experimental technique is presented along with a discussion of several considerations that led to the development of the technique.