Thermal recovery of the lattice damage in neutron-transmutation-doped InSe

Abstract

Positron-lifetime and transport measurements have been performed on neutron-transmutation-doped InSe in order to investigate the nature and recovery characteristics of the recoil-induced damage. The results show that the recovery is accomplished in two stages. The first, in the temperature interval 325T≤375 K, is attributed to recombination of ${\mathit{V}}_{\mathrm{In}}$-${\mathrm{Sn}}_{\mathrm{I}}$ close pairs into ${\mathrm{Sn}}_{\mathrm{In}}$. The second, observed for temperatures above ∼475 K, is associated with annealing of other ${\mathit{V}}_{\mathrm{In}}$-related defects.