Si-implanted and disordered stripe-geometry AlxGa1−xAs-GaAs quantum well lasers
- 1 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9), 903-905
- https://doi.org/10.1063/1.95973
Abstract
The Si impurity is implanted into an AlxGa1−x As‐GaAs quantum well heterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser.Keywords
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