C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition

Abstract

MOS structures were fabricated from Al-doped p-type 3C-SiC epilayers grown on Si by chemical vapor deposition. Their C-V characteristics were studied for the first time at 400 Hz, 10 kHz and 100 kHz. Accumulation, depletion, deep depletion and inversion regions were observed in the C-V curves. The increase of capacitance in the inversion region was observed for reverse sweep of gate bias at 400 Hz and 10 kHz. The fixed oxide charge density and the space charge density in 3C-SiC were estimated to be on the order of 10¹² cm^-2 and 2.8×10¹⁸ cm^-3, respectively.