Analysis of conduction in fully depleted SOI MOSFETs
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (3), 504-506
- https://doi.org/10.1109/16.19960
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performanceIEEE Electron Device Letters, 1987
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986
- Reduction of floating substrate effect in thin-film SOI MOSFETsElectronics Letters, 1986
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983