Double heterostructure Pb1−xCdxS1−ySey/PbS/Pb1−xCdxS1−ySey lasers grown by molecular beam epitaxy
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 400-404
- https://doi.org/10.1016/0022-0248(87)90424-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSbApplied Physics Letters, 1986
- Optically pumped laser oscillation at 3.82 μm from InAs1−xSbx grown by molecular beam epitaxy on GaSbApplied Physics Letters, 1985
- Room-temperature operation of optically pumped InGaAsSb/AlGaAsSb double-heterostructure laser at ≂2 μmApplied Physics Letters, 1985
- Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSbApplied Physics Letters, 1985
- Infrared optical fibersIEEE Journal of Quantum Electronics, 1982
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSbJapanese Journal of Applied Physics, 1980
- Recent advances in lead-chalcogenide diode lasersApplied Physics A, 1979
- Preparation and properties of Pb-xCdxSJournal of Electronic Materials, 1972