Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy
- 2 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (9), 516-518
- https://doi.org/10.1063/1.98265
Abstract
Silicon‐doped GaAs grown by molecular beam epitaxy has been characterized by Hall measurements, infrared local vibrational mode (LVM) absorption, secondary ion and laser source mass spectroscopy. Highly doped samples with [Si]∼3×1019 cm−3 show only a low carrier concentration of 8×1017 cm−3. LVM spectroscopy shows that SiGa donors are compensated predominantly by [Si‐X] complexes, where X has been assigned previously to a gallium vacancy (VGa). Other compensating impurities are not present in the layers at significant concentrations.Keywords
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