Chemical deposition of PAsxNy films onto III–V compound semiconductors
- 1 January 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 103 (1-3), 201-209
- https://doi.org/10.1016/0040-6090(83)90436-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal-insulator-semiconductor devicesJournal of Applied Physics, 1982
- Inversion-mode InP MISFET employing phosphorus-nitride gate insulatorElectronics Letters, 1982
- High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interfaceApplied Physics Letters, 1980
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching TechniqueJapanese Journal of Applied Physics, 1980
- Two-dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interfaceJournal of Vacuum Science and Technology, 1979
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctionsApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Phosphorus 2p electron binding energies. Correlation with extended Hueckel chargesThe Journal of Physical Chemistry, 1970