Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures:pchannel

Abstract

A study of hot-carrier effects in the presence of high magnetic fields in $p$-type silicon inversion layers is reported in a range of lattice temperatures between 1.25 and 20 K. Carrier temperatures $T_c$ as a function of the electric field are deduced from measurements of the amplitude of Shubnikov-de Haas oscillations as a function of lattice temperature $T_L(T_L<10\mathrm{} \mathrm{K})$ and electric field $E$ at high inversion-layer densities for the (110) orientation. For higher lattice temperatures, $T_c$ is deduced from the classical magnetoresistance. In addition, measurements of the surface conductivity $\sigma$ as a function of the source drain electric field at low hole concentrations, where $\sigma$ depends on the temperature and the surface orientation, have been performed. It is found $\sigma$ is proportional to $E^s$ with $0\le s\le 3$ over nearly two decades of $E$ values.