Electronic states of semiconductor-metal-semiconductor quantum-well structures

Abstract

Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. We also predict that ultrathin metal layers can behave as high-density dopant sheets.