Si-O compound formation by oxygen ion implantation into silicon
- 1 October 1985
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 7 (5), 207-210
- https://doi.org/10.1002/sia.740070502
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Activation energy associated with the annealing of buried implanted oxides in siliconJournal of Applied Physics, 1984
- Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysisSurface Science, 1983
- The formation of SiO2 films on silicon by high dose oxygen ion implantationThin Solid Films, 1982
- High Speed C-MOS IC Using Buried SiO2 Layers Formed by Ion ImplantationJapanese Journal of Applied Physics, 1980
- The infrared optical properties of SiO2 and SiO2 layers on siliconJournal of Applied Physics, 1979
- Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal siliconThin Solid Films, 1978
- Properties of SiO2 films formed by oxygen implantation into siliconThin Solid Films, 1978
- A study of silicon oxides prepared by oxygen implantation into siliconJournal of Physics D: Applied Physics, 1977
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
- Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical MeasurementsJournal of the Electrochemical Society, 1972