On the nature of the disordered layer produced by ion implantation
- 30 June 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 26 (12), 901-905
- https://doi.org/10.1016/0038-1098(78)91248-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystalsSolid State Communications, 1977
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- Détermination de la taille et de la concentration de cristallites dans une couche amorphe par mesure de conductivitéRevue de Physique Appliquée, 1977
- On amorphous layer formation in silicon by ion implantationRadiation Effects, 1974
- Crystallization processes in a-Ge thin filmsJournal of Non-Crystalline Solids, 1972
- Localized conduction processes in amorphous germaniumPhilosophical Magazine, 1971
- Effect of Deposition Parameters on the Crystallinity of Evaporated Germanium FilmsJournal of Applied Physics, 1969