Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process
- 1 August 1999
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 76 (1-3), 283-292
- https://doi.org/10.1016/s0924-4247(99)00058-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Semiconductor pressure sensor based on FET structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Surface micromachining technology applied to the fabrication of a FET pressure sensorJournal of Micromechanics and Microengineering, 1996
- Pressure-sensitive insulated gate field-effect transistor (PSIGFET)Sensors and Actuators A: Physical, 1990
- The pressfet: an integrated electret-mosfet based pressure sensorSensors and Actuators, 1988