The electronic properties of plasma-deposited films of hydrogenated amorphous SiNx (0<x<1.2)

Abstract

We present the results of a comprehensive series of measurements on glow‐discharge (plasma) ‐deposited silicon nitride films SiN_x:H, with x in the range 0<xx, in the range xx the rise in the N‐H concentration produces a small increase in the hydrogen content, but even for these samples most of the hydrogen is bonded to silicon. The optical absorption edge due to band‐gap transitions broadens with increasing x due to a change in the nature of the valence band from Si‐Si bonds to N lone‐pair states. Electrical conductivity at high fields and magnetic resonance measurements give information about the defects in the band gap. These results support the Robertson–Powell model in which the principal defect in the band gap of silicon nitride is the silicon dangling bond.