Annealing behavior of hydrogenated amorphous silicon—nitrogen alloy films prepared by sputtering
- 1 October 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 119 (2), 715-720
- https://doi.org/10.1002/pssb.2221190233
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Defects in amorphous Si-N films prepared by RF sputteringSolar Energy Materials, 1982
- Properties of Amorphous Films Prepared from SiH4–N2–H2 Gas MixtureJapanese Journal of Applied Physics, 1982
- NMR and IR Studies on Hydrogenated Amorphous Si1-xCx FilmsJapanese Journal of Applied Physics, 1982
- Glow Discharge a-Si1-xCx: H Films Studied by ESR and IR MeasurementsJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge DecompositionJapanese Journal of Applied Physics, 1981
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979