Photovoltaic properties and junction formation in CuInSe2
- 1 June 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (6), 2477-2480
- https://doi.org/10.1063/1.324012
Abstract
Studies of diffusion and photovoltaic effects in CuInSe2 p‐n junctions are reported. Junctions were formed by annealing Zn‐, Cd‐, and Cu‐plated p‐type samples at temperatures from 200 to 450 °C. The most efficient photodetectors are formed by 5–10‐min anneals at 200 °C with a calculated interdiffusion coefficient of ∼5×10−10 cm2/sec.Keywords
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