Silicon-interstitial–oxygen-interstitial complex as a model of the 450°C oxygen thermal donor in silicon
- 11 February 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (6), 747-749
- https://doi.org/10.1103/physrevlett.66.747
Abstract
The complex of a divalent silicon interstitial and a pair of adjacent oxygen intersitials is proposed as the core of the 450 °C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to a self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge. The calculated spin distribution is in qualitative agreement with the one found experimentally for the NL8 center.Keywords
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