Theory of ballistic-electron-emission spectroscopy ofNiSi2/Si(111) interfaces

Abstract
We discuss theoretical calculations of ballistic-electron-emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi2/Si(111) interfaces showing a factor three difference between them at low voltages.