The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (12), 2493-2500
- https://doi.org/10.1109/t-ed.1987.23340
Abstract
We present a comparative study of device degradation for conventional n- and p-channel MOSFET's. The experimentally determined features of degradation are investigated with a 2-D simulation including fast and slow interface states as well as channel mobility degradation due to Coulomb scattering off these charges. Three different models concerning kind and spatial distribution are studied. We present a model that self-consistently describes the observed experimental features in the pentode and subthreshold regimes of the device. Furthermore, the substrate current is included in this analysis.Keywords
This publication has 17 references indexed in Scilit:
- Hot-carrier drifts in submicrometer p-channel MOSFET'sIEEE Electron Device Letters, 1987
- Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradationIEEE Transactions on Electron Devices, 1987
- Measurement and analysis of hot-carrier-stress effect on NMOSFET's using substrate current characterizationIEEE Electron Device Letters, 1986
- Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping techniqueIEEE Electron Device Letters, 1986
- Channel-implant dose dependence of hot-carrier generation and injection in submicrometer buried-channel PMOSFET'sIEEE Transactions on Electron Devices, 1985
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET'sIEEE Electron Device Letters, 1985
- Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injectionElectronics Letters, 1982
- Two-dimensional numerical simulation of impurity redistribution in VLSI processesIEEE Transactions on Electron Devices, 1980
- The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interfaceSurface Science, 1972