Zn1-XCdXSe (X=0.2-0.3) Single-Quantum-Well Laser Diodes without GaAs Buffer Layers
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10B), L1478
- https://doi.org/10.1143/jjap.31.l1478
Abstract
Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm2. The output power from the lasers exceeded 100 mW per facet.Keywords
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