Electrical properties of S implants in GaAs activated by infrared rapid thermal annealing

Abstract

S-implanted GaAs at room temperature was annealed by several seconds radiation from halogen lamps. Differential Hall effect/sheet resistivity measurements have been used to study the annealing behavior and electrical carrier concentration profiles of S-implanted GaAs. Electrical activation was found to increase with increasing annealing temperature up to 1100 °C. A maximum electrical activation of 78% was obtained for a dose of 5×1013 cm−2. Also, more than 5×1018 cm−3 peak carrier concentration was obtained for a dose of 1×1014 cm−2, indicating about three times higher peak concentration than that obtained after conventional furnace annealing. For higher doses, the implanted S in the annealed GaAs does not follow Gaussian distribution even after rapid annealing. Damage-enhanced outdiffusion of S is considered to be responsible for this result.