A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure
- 25 June 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1815-1818 vol.3
- https://doi.org/10.1109/mwsym.2002.1012215
Abstract
We describe high power 36 W CW operation at 30 V using AlGaN/GaN HEMTs on SiC. Surface-charge-controlled structure, consisting of n-type doped thin GaN cap layer on AlGaN/GaN HEMT structure, is used to obtain high gate-drain breakdown voltage and to reduce current collapse. By optimizing threshold voltage of this structure, we obtained a maximum drain current of 1 A/mm and a gate-drain breakdown voltage over 200 V. A 24-mm-wide-gate chip showed output power of 45.6 dBm (36 W) at 2.2 GHz with a liner gain of 9.7 dB.Keywords
This publication has 8 references indexed in Scilit:
- A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTsIEEE Electron Device Letters, 2001
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Current instabilities in GaN-based devicesIEEE Electron Device Letters, 2001
- Fabrication and characterisation of enhanced barrier AlGaN/GaN HFETElectronics Letters, 1999