High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary
- 1 August 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 104 (3), 683-694
- https://doi.org/10.1016/0022-0248(90)90012-a
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm rangeJournal of Electronic Materials, 1987
- Croissance par épitaxie en phase liquide et caractérisation d'alliages Ga1-xIoxAsySb1-y à paramètre de maille accordé sur celui de GaSbRevue de Physique Appliquée, 1987
- Ultimate Realistic Losses Of ZrF 4 Based Ir FibresPublished by SPIE-Intl Soc Optical Eng ,1986
- GaInAsSb metastable alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessmentJournal of Electronic Materials, 1986
- Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength rangeJournal of Electronic Materials, 1985
- Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSbApplied Physics Letters, 1985
- A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary systemCrystal Research and Technology, 1978
- The pseudoquaternary phase diagram of the Ga-In-As-Sb systemJournal of Crystal Growth, 1977
- Liquid phase epitaxial growth of InGaAsSb on (111)B InAsJournal of Crystal Growth, 1976