Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films

Abstract

The change in structure and properties of doped µc-Si films with thickness increase were investigated by ESCA, TEM and IR methods. Dopant contents were analyzed by AES and IMA. The Fermi-level position of phosphorus doped µc-Si, evaluated from Si 2p binding energy by ESCA, was shifted by more than 0.3 eV to conduction band edge with the growth of microcrystallization. Phosphorus doping efficiency in µc-Si was better than that in a-Si at the same dopant density. On the contrary, the Fermi-level position of boron doped µc-Si was almost unchanged in spite of its microcrystallization in the deposition process and high doping.