Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L549
- https://doi.org/10.1143/jjap.23.l549
Abstract
The change in structure and properties of doped µc-Si films with thickness increase were investigated by ESCA, TEM and IR methods. Dopant contents were analyzed by AES and IMA. The Fermi-level position of phosphorus doped µc-Si, evaluated from Si 2p binding energy by ESCA, was shifted by more than 0.3 eV to conduction band edge with the growth of microcrystallization. Phosphorus doping efficiency in µc-Si was better than that in a-Si at the same dopant density. On the contrary, the Fermi-level position of boron doped µc-Si was almost unchanged in spite of its microcrystallization in the deposition process and high doping.Keywords
This publication has 7 references indexed in Scilit:
- Structure Change of Microcrystalline Silicon Films in Deposition ProcessJapanese Journal of Applied Physics, 1984
- Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission SpectroscopyJapanese Journal of Applied Physics, 1983
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Spectroscopic determination of the position of the ferm-level in doped amorphous hydrogenated siliconSolid State Communications, 1979
- X-Ray Photoelectron Spectroscopy of SiO2-Si Interfacial Regions: Ultrathin Oxide FilmsIBM Journal of Research and Development, 1978
- Calibration of electron spectraJournal of Electron Spectroscopy and Related Phenomena, 1973