Analysis of light and current induced effects in hydrogenated amorphous silicon
- 15 October 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8), 860-862
- https://doi.org/10.1063/1.96010
Abstract
A systematic investigation has been made on the changes in mobility‐lifetime product and defect density induced by light and current injection in amorphous silicon p‐i‐n junction. It has been found that these changes involve the creation and interconversion of two kinds of metastable defects, being induced merely by carrier trapping phenomenon.Keywords
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