Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4), 239-245
- https://doi.org/10.1016/0022-0248(91)90978-e
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Migration processes of co-doped Si and Be delta-planes in MBE-grown GaAsSemiconductor Science and Technology, 1990
- Delta doping of III–V compound semiconductors: Fundamentals and device applicationsJournal of Vacuum Science & Technology A, 1990
- Post-growth diffusion of Si in delta -doped GaAs grown by MBESemiconductor Science and Technology, 1989
- Measurement of narrow Si dopant distributions in GaAs by SIMSSurface and Interface Analysis, 1989
- Migration of Si in δ-doped GaAsSemiconductor Science and Technology, 1988
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Diffusion in III-V semiconductors from spin-on-film sourcesJournal of Physics D: Applied Physics, 1984
- Nucleation effects during MBE growth of Sn-Doped GaAsApplied Physics A, 1982
- Diffusion of tin in n-type GaAsJournal of Physics D: Applied Physics, 1978
- Anomalous diffusion profiles of zinc in GaAsJournal of Materials Science, 1972