Room-temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μm
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (9), 528-531
- https://doi.org/10.1063/1.88244
Abstract
Vapor‐grown p‐n heterojunction laser structures of InxGa1−xAs/InyGa1−yP have been prepared with laser threshold current densities as low as 15 000 A/cm2 at room temperature and 1000 A/cm2 at 77 °K. Emission wavelengths between 1.025 and 1.15 μm have been obtained at 300 °K.Keywords
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