Electrical and optical properties of ion implanted Hg1−xCdxTe/CdTe epilayers
- 30 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2), 270-275
- https://doi.org/10.1016/0022-0248(82)90335-9
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Crystallographic properties of as grown CdxHg1-xTe epitaxial layers deposited by cathodic sputteringJournal of Crystal Growth, 1982
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981
- Molecular beam epitaxy of II–VI compounds: CdxHg1−xTeJournal of Crystal Growth, 1981
- Effects of annealing on Hg0.79Cd0.21Te epilayersJournal of Applied Physics, 1980
- Electrical properties of as-grown Hg1−xCdxTe epitaxial layersJournal of Applied Physics, 1980
- Liquid phase epitaxial growth of CdTe/Hg1−xCdxTe multilayers (0.3<x<0.5)Journal of Applied Physics, 1980
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Doping properties of selected impurities in Hg1−x Cdx TeJournal of Electronic Materials, 1977
- Some properties of photovoltaic CdxHg1−xTe detectors for infrared radiationInfrared Physics, 1975
- CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORSApplied Physics Letters, 1967