Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) on photopumped NN3 pair transitions

Abstract

Laser operation of GaAs_1−xP_x:N (x = 0.37, 77 °K) has been achieved by pumping the crystal below the fundamental energy gap on the NN₃ transition. Photoluminescence experiments on the non‐N‐doped epitaxial GaAs_1−xP_x underlying the thin (≤ 25 μ) N‐doped layer indicate that the absorption of He–Ne laser pump photons in GaAs_1−xP_x:N (x = 0.37) occurs only on the NN₃ transition.