Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term
- 15 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (3), 1716-1719
- https://doi.org/10.1103/physrevb.49.1716
Abstract
Experimental evidence for light-induced annealing of defects in a-Si:H has recently been reported. However the experimental data about the removal of the defects under illumination are so limited that considerable uncertainty remains about the form of the light-induced term in the defect rate equation and its thermal activation energy. We here analyze the kinetics of light-induced creation and annealing of metastable defects in terms of a dispersive model. Our analysis suggests that the light-induced annealing term is proportional to the product of defect density and the carrier density. The activation energy of the light-induced annealing prefactor is about 0.45 eV.Keywords
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