Dependence of steady-state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range
- 12 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (15), 1791-1793
- https://doi.org/10.1063/1.109551
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Dispersive model for the kinetics of light-induced defects ina-Si:HPhysical Review B, 1991
- Influence of N, O and C impurities in a-Si:HJournal of Non-Crystalline Solids, 1991
- The saturation of light-induced defects in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1991
- Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous siliconApplied Physics Letters, 1990
- Saturation of the light-induced defect density in hydrogenated amorphous siliconApplied Physics Letters, 1989
- Reinterpretation of degradation kinetics of amorphous siliconApplied Physics Letters, 1989
- Saturation of Optical Degradation in a-Si:H Films with Different MorphologiesJapanese Journal of Applied Physics, 1988
- Kinetics, energetics, and origins of defects in amorphous Si:HApplied Physics Letters, 1988
- Creation and saturation of light-induced defects in a-Si:HJournal of Non-Crystalline Solids, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985