Progress towards silicon optoelectronics using porous silicon technology
- 1 August 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 102, 436-441
- https://doi.org/10.1016/0169-4332(96)00094-3
Abstract
No abstract availableThis publication has 54 references indexed in Scilit:
- Sub-micrometre luminescent porous silicon structures using lithographically patterned substratesThin Solid Films, 1995
- Luminescent anodized silicon aerocrystal networks prepared by supercritical dryingNature, 1994
- The Physics of Macropore Formation in Low Doped n‐Type SiliconJournal of the Electrochemical Society, 1993
- Photoluminescence from stain-etched polycrystalline Si thin filmsApplied Physics Letters, 1993
- Doping-induced selective area photoluminescence in porous siliconApplied Physics Letters, 1993
- Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline SiliconJapanese Journal of Applied Physics, 1993
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- Atmospheric impregnation of porous silicon at room temperatureJournal of Applied Physics, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porous silicon techniques for SOI structuresIEEE Circuits and Devices Magazine, 1987