High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Abstract

We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-$\mathrm{Ti}{\mathrm{O}}_2∕\mathrm{Ti}\mathrm{N}$ devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of $5\mathrm{ns}$ voltage pulses. In addition, data retention of more than $256\mathrm{h}$ at $85°\mathrm{C}$ and an excellent endurance of over $2\times {10}^6\text{cycles}$ have been confirmed. These results indicate that $\mathrm{Pt}∕\mathrm{Ti}{\mathrm{O}}_2∕\mathrm{Ti}\mathrm{N}$ devices have a potential for nonvolatile multiple-valued memory devices.