Growth of Cd1−xZnxTe by molecular beam epitaxy
- 29 September 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13), 797-799
- https://doi.org/10.1063/1.97550
Abstract
Cd1−xZnxTe has been grown on GaAs substrates for compositions from x=0 to x=1. Binaries are shown to be of high quality, but x‐ray rocking curve half‐widths are extremely broad for most ternary compositions. Attempts to modify the interface yield only modest and uneven improvement in rocking curve half‐widths. The poor quality appears to be due to a phase separation.Keywords
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