Thermal donors and carbon-oxygen defects in silicon
- 16 February 1987
- journal article
- localized electronic-states
- Published by Wiley in Physica Status Solidi (a)
- Vol. 99 (2), 581-591
- https://doi.org/10.1002/pssa.2210990229
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- On the Annihilation of Thermal Donors in Silicon CrystalsPhysica Status Solidi (a), 1984
- Carbon-oxygen complexes as nuclei for the precipitation of oxygen in Czochralski siliconApplied Physics Letters, 1982
- On the donor activity of oxygen in silicon at temperatures from 500 to 800 °CPhysica Status Solidi (a), 1981
- On the kinetics of thermal donors in oxygen-rich silicon in the range from 450 to 900°CPhysica Status Solidi (a), 1980
- Electrical and infrared spectroscopic investigations of oxygen-related donors in siliconPhysica Status Solidi (a), 1979
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957