680-nm band GaInP/AlGaInP tapered stripe laser
- 16 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (20), 1572-1573
- https://doi.org/10.1063/1.98610
Abstract
A gain‐guiding tapered stripe laser was fabricated using a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 °C, an aspect ratio of about 2, and an astigmatism near 25 μm. The emission wavelength was 684 nm. Thirty‐two devices have been operating without significant degradation for more than 2000 h at 50 °C with a constant output power of 3 mW.Keywords
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