CH4/H2: A universal reactive ion etch for II-VI semiconductors?
- 18 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20), 2531-2533
- https://doi.org/10.1063/1.106929
Abstract
A high resolution reactive ion etching process, capable of producing nanostructures less than 50 nm wide in a variety of II‐VI semiconductors, is described. Using a mixture of methane and hydrogen, binary II‐VI compound, e.g., ZnTe, ZnSe, CdTe, ZnS, CdS, and ternary compounds, e.g., CdMnTe and ZnSSe, have been etched. It would appear that the CH4/H2 gas mixture will play the same role for the II‐VI semiconductors as it does for the III‐Vs, that of seemingly ubiquitous etching system.Keywords
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