Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

Abstract

We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of $562.7\mathrm{nm}$ grown on low extended defect density semipolar $\left(11\overline{2}2\right)$ bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and $200\mathrm{mA}$ under pulsed operation (10% duty cycle) were $5.9\mathrm{mW}$ , 13.4% and $29.2\mathrm{mW}$ , 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.