Multiscanning electron beam annealing of phosphorus-implanted silicon

Abstract

(100) Si wafers implanted with ³¹P⁺ ions (100 keV, 2×10¹⁵ cm⁻²) have been annealed with a multiscanning electron beam by using a fusion electron gun. The main results obtained are (i) the multiscan electron beam annealing technique can be used to obtain excellent annealing of the damaged layer, (ii) the electrical activity and the mobility values of electron‐annealed specimens are the same as for control samples annealed at 900 °C for 30 min., (iii) in contrast with furnace annealing, the multiscan electron beam annealing technique does not degrade the lifetime of the base material, and (iv) carrier concentration profiles obtained by the stripping and Van der Pauw techniques indicates that no diffusion of the implanted ions takes place.