Surface structure imaging, electronically induced modifications and electroluminescence of porous silicon by scanning tunneling microscopy
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6), 191-196
- https://doi.org/10.1016/0022-2313(93)90131-6
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Scanning probe microscopy and scanning tunneling spectroscopy of porous siliconApplied Physics Letters, 1992
- Correlation between silicon hydride species and the photoluminescence intensity of porous siliconApplied Physics Letters, 1992
- Electronic structure of light-emitting porous SiApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Some Perspectives on the Luminescence Mechanism Via Surface-Confined States of Porous SiMRS Proceedings, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Morphology of porous silicon studied by STM/SEMApplied Surface Science, 1990
- Tunneling through a controllable vacuum gapApplied Physics Letters, 1982
- Oxidation of Porous Silicon and Properties of Its Oxide FilmJapanese Journal of Applied Physics, 1980