Growth of single crystal SrF2(001)/GaAs(001) structures by molecular beam epitaxy

Abstract

Epitaxial SrF₂ layers were grown onto GaAs (001) at T>250 °C by molecular beam epitaxy. The dominant growth mechanism appears to be by three‐dimensional island growth although significant ordering of the surface occurs on annealing the layers at T>400 °C. Growth of epitaxial GaAs (001) at 540 °C by molecular beam epitaxy onto the SrF₂ films has also been demonstrated. The results suggest that stacked, single crystal, alternating layers of GaAs (001) and SrF₂ (001) should be amenable to growth by molecular beam epitaxy.