Gain characteristics of strained quantum well lasers
- 1 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (1), 10-12
- https://doi.org/10.1063/1.102647
Abstract
InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm−1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient measurements indicate an increase from 0.0535 to 0.0691 cm μm/A for quantum well lasers with 0% InAs and 10–20% InAs, respectively. The maximum output power achieved for a device with a 100 μm aperture is 3 W cw.Keywords
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