A review of the magneto-impurity effect in semiconductors
- 28 July 1979
- journal article
- review article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (14), 2809-2828
- https://doi.org/10.1088/0022-3719/12/14/017
Abstract
Recent observations of the magneto-impurity effect in n-GaAs, n-InP, p-Te and n- and p-Ge are reviewed. The effect is due to resonant inelastic scattering of free carriers by shallow donors or acceptors in the presence of a quantising magnetic field and gives rise to oscillatory structure in the magnetoresistance or photoconductivity.Keywords
This publication has 19 references indexed in Scilit:
- Impurity spectroscopy on tellurium by means of magnetoresistance measurements under nonohmic conditionsSolid-State Electronics, 1978
- Energy relaxation of photoexcited electrons in n- and p-Ge by magneto-impurity and magnetophonon processesJournal of Physics C: Solid State Physics, 1977
- High resolution fourier transform spectroscopy of shallow acceptors in ultra-pure germaniumSolid State Communications, 1974
- An investigation of the energy relaxation of warm electrons in indium phosphide by means of the magnetophonon effectJournal of Physics C: Solid State Physics, 1974
- Cyclotron Resonance in TelluriumPhysical Review B, 1973
- Electrons and optic phonons in solids-the effects of longitudinal optical lattice vibrations on the electronic excitations of solidsReports on Progress in Physics, 1973
- Magnetophonon Resonance of Hot Electrons in-InSb at 77°KPhysical Review Letters, 1972
- Inversion asymmetry splitting of Landau levels in telluriumSolid State Communications, 1970
- Submillimeter Cyclotron Resonance in TelluriumPhysical Review Letters, 1969
- Constantes élastiques du tellure entre 100 °K et 300 °KPhysica Status Solidi (b), 1964