High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy
- 7 February 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (6), 742-744
- https://doi.org/10.1063/1.125880
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxyJournal of Applied Physics, 1999
- Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxyApplied Physics Letters, 1999
- Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrateApplied Physics Letters, 1999
- High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1999
- Electron mobility in modulation-doped AlGaN–GaN heterostructuresApplied Physics Letters, 1999
- High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHzIEEE Electron Device Letters, 1997
- Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substratesApplied Physics Letters, 1996
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequencyElectronics Letters, 1996
- Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1995