Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5A), L576
- https://doi.org/10.1143/jjap.26.l576
Abstract
Raman spectra are measured on ZnSe epitaxial layers with a thickness of 0.09∼3.4 µm grown on GaAs(100) substrates by low-pressure vapor phase epitaxy both in RF hydrogen plasma and in plasma-free conditions. A 1 cm-1 high-frequency shift is observed in the longitudinal optical (LO) Raman peak for layers thinner than 0.2 µm grown in the plasma-free condition. The shift is due to the two-dimensional elastic strain in epitaxial layers. No frequency shift is observed for layers grown in hydrogen plasma, even for the thinnest layer. The LO phonon scattering efficiency depends on the distance from layer-substrate interface.Keywords
This publication has 9 references indexed in Scilit:
- Low Pressure Vapor Phase Epitaxy of High Purity ZnSe Using Metallic Zinc and Selenium as Source MaterialsJapanese Journal of Applied Physics, 1987
- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs SubstratesJapanese Journal of Applied Physics, 1986
- Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Growth of High-Quality ZnSe Layers in Hydrogen PlasmaJapanese Journal of Applied Physics, 1986
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Raman scattering in GaSb-AlSb strained layer superlatticesApplied Physics Letters, 1985
- Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor depositionApplied Physics Letters, 1982
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963