Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs
- 1 August 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (8), 831-838
- https://doi.org/10.1016/0038-1101(80)90099-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968