InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(M e C p)3

Abstract

Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)₃, where Me=CH₃ and Cp=n⁵‐C₅H₅, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10⁻⁹–10⁻⁷). In photoluminescence experiments they showed strong Yb³⁺‐4f emission. The layers were further characterized by Hall measurements and secondary‐ion mass spectroscopy. In order to obtain n‐type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.