Etch rate enhancement of photoresist in nitrogen-containing plasmas
- 11 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (24), 2488-2490
- https://doi.org/10.1063/1.102007
Abstract
It is shown that the etch rate of photoresist can be greatly enhanced by adding 1% of nitrogen into the oxygen plasma. An increase in the atomic oxygen concentration is shown to be responsible for this enhancement in the etch rate. A further enhancement in the etch rate is obtained by introducing CF4 into the O2 -N2 plasma. The enhancement in the etch rate of photoresist in the CF4 -N2 -O2 mixture is the result of an increase in the atomic concentrations of oxygen and fluorine in the plasma.Keywords
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